MMBT4403LT3
- Mfr.Part #
- MMBT4403LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.6A SOT23-3
- Stock
- 18,391
- In Stock :
- 18,391
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Width :
- 2.64mm
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 200MHz
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 40V
- Surface Mount :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Base Part Number :
- MMBT4403
- Terminal Finish :
- Tin (Sn)
- Collector-Base Capacitance-Max :
- 8.5pF
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -40V
- Weight :
- 4.535924g
- Collector Base Voltage (VCBO) :
- 40V
- Max Power Dissipation :
- 225mW
- Factory Lead Time :
- 10 Weeks
- Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 40V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 40V
- Length :
- 3.04mm
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -750mV
- Current Rating :
- 600mA
- hFE Min :
- 30
- Published :
- 2007
- Frequency :
- 200MHz
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 200MHz
- Turn Off Time-Max (toff) :
- 255ns
- Max Collector Current :
- 600mA
- Height :
- 1.11mm
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MMBT4403LT3

PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4403LT3G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of -750mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 600mA volts.
MMBT4403LT3G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 200MHz
MMBT4403LT3G Applications
There are a lot of ON Semiconductor
MMBT4403LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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