MMBT4401LT3G
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- Mfr.Part #
- MMBT4401LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 15,237
- In Stock ：
- 15,237
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.11mm
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Elements :
- 1
- Transition Frequency :
- 250MHz
- Voltage - Rated DC :
- 40V
- Terminal Form :
- Gull wing
- hFE Min :
- 100
- Collector Base Voltage (VCBO) :
- 60V
- Power - Max :
- 300mW
- Pin Count :
- 3
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time-Max (ton) :
- 255ns
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 750mV
- Packaging :
- Tape and Reel (TR)
- Length :
- 3.04mm
- Max Breakdown Voltage :
- 40V
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Type :
- NPN
- Power Dissipation :
- 225mW
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Surface Mount :
- yes
- Current Rating :
- 600mA
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- Frequency :
- 250MHz
- Base Part Number :
- MMBT4401
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Width :
- 2.64mm
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Max Junction Temperature (Tj) :
- 150°C
- Max Collector Current :
- 600mA
- Factory Lead Time :
- 10 Weeks
- Max Power Dissipation :
- 225mW
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 250MHz
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- MMBT4401LT3G
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4401LT3G Overview
This device has a DC current gain of 100 @ 150mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 750mV.A VCE saturation (Max) of 750mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 600mA volts is possible.
MMBT4401LT3G Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
MMBT4401LT3G Applications
There are a lot of ON Semiconductor
MMBT4401LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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