MMBT4401LT3G
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- Mfr.Part #
- MMBT4401LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 15,237
- In Stock ：
- 15,237
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 300mW
- Number of Elements :
- 1
- Base Part Number :
- MMBT4401
- Current Rating :
- 600mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 600mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- 750mV
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 250MHz
- Width :
- 2.64mm
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Mounting Type :
- Surface Mount
- hFE Min :
- 100
- Gain Bandwidth Product :
- 250MHz
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 40V
- REACH SVHC :
- No SVHC
- Turn On Time-Max (ton) :
- 255ns
- Power Dissipation :
- 225mW
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Finish :
- Tin (Sn)
- Published :
- 2007
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 40V
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Max Power Dissipation :
- 225mW
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 10 Weeks
- Length :
- 3.04mm
- Collector Emitter Breakdown Voltage :
- 40V
- Lead Free :
- Lead Free
- Transition Frequency :
- 250MHz
- Height :
- 1.11mm
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- MMBT4401LT3G
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4401LT3G Overview
This device has a DC current gain of 100 @ 150mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 750mV.A VCE saturation (Max) of 750mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 600mA volts is possible.
MMBT4401LT3G Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
MMBT4401LT3G Applications
There are a lot of ON Semiconductor
MMBT4401LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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