MMBT4401LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Contact Plating :

Tin

Gain Bandwidth Product :

250MHz

Terminal Position :

Dual

Transistor Element Material :

SILICON

hFE Min :

20

Number of Elements :

1

Transition Frequency :

250MHz

Max Collector Current :

600mA

Height :

1.11mm

Frequency :

250MHz

Radiation Hardening :

No

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

60V

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

40V

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 1V

Collector Emitter Saturation Voltage :

400mV

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Length :

2.9mm

Number of Terminations :

3

Current Rating :

600mA

Polarity/Channel Type :

NPN

Turn On Time-Max (ton) :

255ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Voltage - Rated DC :

40V

Weight :

4.535924g

Max Breakdown Voltage :

40V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

JESD-609 Code :

e3

Factory Lead Time :

10 Weeks

Max Power Dissipation :

300mW

Peak Reflow Temperature (Cel) :

260

Published :

2006

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

150°C

Pin Count :

3

Emitter Base Voltage (VEBO) :

6V

REACH SVHC :

No SVHC

Base Part Number :

MMBT4401

Width :

1.3mm

Number of Pins :

3

Collector Emitter Breakdown Voltage :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

225mW

ECCN Code :

EAR99

Element Configuration :

Single