MMBT4401LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Rated DC :

40V

Operating Temperature :

-55°C~150°C TJ

Weight :

4.535924g

Max Collector Current :

600mA

Mounting Type :

Surface Mount

Frequency :

250MHz

Transistor Type :

NPN

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Number of Elements :

1

Height :

1.11mm

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Turn On Time-Max (ton) :

255ns

Emitter Base Voltage (VEBO) :

6V

Factory Lead Time :

10 Weeks

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Contact Plating :

Tin

Polarity/Channel Type :

NPN

Terminal Form :

Gull wing

Power Dissipation :

225mW

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Radiation Hardening :

No

Transistor Application :

SWITCHING

Max Power Dissipation :

300mW

Number of Pins :

3

Pbfree Code :

yes

Pin Count :

3

ECCN Code :

EAR99

Max Breakdown Voltage :

40V

Width :

1.3mm

Collector Emitter Saturation Voltage :

400mV

Published :

2006

Collector Emitter Voltage (VCEO) :

40V

Number of Terminations :

3

Length :

2.9mm

REACH SVHC :

No SVHC

Transition Frequency :

250MHz

Collector Base Voltage (VCBO) :

60V

Base Part Number :

MMBT4401

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 1V

Gain Bandwidth Product :

250MHz

Max Junction Temperature (Tj) :

150°C

Peak Reflow Temperature (Cel) :

260

hFE Min :

20

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Current Rating :

600mA

Collector Emitter Breakdown Voltage :

40V