MMBT4401
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- Mfr.Part #
- MMBT4401
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 175,799
- In Stock ：
- 175,799
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.1mm
- Turn Off Time-Max (toff) :
- 255ns
- Gain Bandwidth Product :
- 250MHz
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 60V
- Published :
- 2012
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- hFE Min :
- 40
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Max Junction Temperature (Tj) :
- 150°C
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 6V
- Voltage - Rated DC :
- 40V
- Transition Frequency :
- 250MHz
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Application :
- SWITCHING
- Continuous Collector Current :
- 600mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 750mV
- Max Collector Current :
- 600mA
- Number of Pins :
- 3
- Length :
- 3.05mm
- Current - Collector Cutoff (Max) :
- 100nA
- Frequency :
- 250MHz
- Factory Lead Time :
- 19 Weeks
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 300mW
- Base Part Number :
- MMBT4401
- Max Breakdown Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 40V
- Width :
- 1.4mm
- Weight :
- 7.994566mg
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Additional Feature :
- High Reliability
- Power Dissipation :
- 310mW
- Lead Free :
- Lead Free
- Series :
- Automotive, AEC-Q101
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Datasheets
- MMBT4401
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4401-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
MMBT4401-7-F Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
MMBT4401-7-F Applications
There are a lot of Diodes Incorporated
MMBT4401-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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