MMBT4401
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- Mfr.Part #
- MMBT4401
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 175,799
- In Stock ：
- 175,799
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 40V
- Gain Bandwidth Product :
- 250MHz
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 40V
- Emitter Base Voltage (VEBO) :
- 6V
- Width :
- 1.4mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Continuous Collector Current :
- 600mA
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 60V
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 300mW
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Transition Frequency :
- 250MHz
- Frequency :
- 250MHz
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 750mV
- Transistor Element Material :
- SILICON
- Published :
- 2012
- Max Collector Current :
- 600mA
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Voltage (VCEO) :
- 40V
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Height :
- 1.1mm
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Max Junction Temperature (Tj) :
- 150°C
- Lead Free :
- Lead Free
- Power Dissipation :
- 310mW
- hFE Min :
- 40
- Weight :
- 7.994566mg
- Length :
- 3.05mm
- Base Part Number :
- MMBT4401
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Voltage - Rated DC :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Turn Off Time-Max (toff) :
- 255ns
- Additional Feature :
- High Reliability
- Factory Lead Time :
- 19 Weeks
- Number of Terminations :
- 3
- Datasheets
- MMBT4401
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4401-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
MMBT4401-7-F Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
MMBT4401-7-F Applications
There are a lot of Diodes Incorporated
MMBT4401-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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