MMBT4356

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Mfr.Part #
MMBT4356
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 80V 0.8A SOT23-3
Stock
15,194
In Stock :
15,194

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2002
Package / Case :
TO-236-3, SC-59, SOT-23-3
Number of Terminations :
3
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
500mV
Turn Off Time-Max (toff) :
400ns
Element Configuration :
Single
Mount :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 10mA 10V
Transistor Type :
PNP
Emitter Base Voltage (VEBO) :
-5V
hFE Min :
50
Power Dissipation :
350mW
Terminal Form :
Gull wing
Collector Base Voltage (VCBO) :
-80V
RoHS Status :
RoHS Compliant
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Voltage - Rated DC :
-80V
Transistor Application :
AMPLIFIER
Polarity/Channel Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Number of Pins :
3
Weight :
30mg
Max Power Dissipation :
350mW
Max Collector Current :
800mA
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Saturation Voltage :
-500mV
Current Rating :
-800mA
Current - Collector Cutoff (Max) :
50nA
Terminal Position :
Dual
Number of Elements :
1
Collector Emitter Breakdown Voltage :
80V
Datasheets
MMBT4356
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT4356 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, MMBT4356 pinout, MMBT4356 datasheet PDF, MMBT4356 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT4356 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT4356


PNP -55°C~150°C TJ 50nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT4356 Overview


DC current gain in this device equals 50 @ 10mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -800mA current rating.In extreme cases, the collector current can be as low as 800mA volts.

MMBT4356 Features


the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA


MMBT4356 Applications


There are a lot of ON Semiconductor
MMBT4356 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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