MMBT4354

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

-5V

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

60V

Lead Free :

Lead Free

Power Dissipation :

350mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

930μm

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

500nA ICBO

Radiation Hardening :

No

Transistor Application :

SWITCHING

Max Breakdown Voltage :

60V

Current Rating :

-800mA

Voltage - Rated DC :

-60V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Terminal Position :

Dual

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Collector Emitter Voltage (VCEO) :

60V

Length :

2.9mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Pbfree Code :

yes

Max Power Dissipation :

350mW

Number of Pins :

3

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Element Configuration :

Single

Collector Emitter Saturation Voltage :

-500mV

Terminal Form :

Gull wing

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Transistor Type :

PNP

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Weight :

30mg

Width :

1.3mm

Published :

2003

Base Part Number :

MMBT4354

hFE Min :

50

Turn Off Time-Max (toff) :

400ns

Max Collector Current :

800mA

Collector Base Voltage (VCBO) :

-60V