MMBT4354

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

MMBT4354

hFE Min :

50

Max Power Dissipation :

350mW

Element Configuration :

Single

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Max Breakdown Voltage :

60V

Voltage - Rated DC :

-60V

Terminal Position :

Dual

Number of Pins :

3

Emitter Base Voltage (VEBO) :

-5V

Width :

1.3mm

Turn Off Time-Max (toff) :

400ns

Height :

930μm

Terminal Form :

Gull wing

Max Collector Current :

800mA

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

-60V

Published :

2003

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

60V

Weight :

30mg

Transistor Type :

PNP

Collector Emitter Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA ICBO

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Power Dissipation :

350mW

Current Rating :

-800mA

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

-500mV

Mount :

Surface Mount

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Mounting Type :

Surface Mount

Length :

2.9mm