MMBT4126LT3G

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Mfr.Part #
MMBT4126LT3G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 25V 0.2A SOT23-3
Stock
9,930
In Stock :
9,930

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Length :
3.04mm
Pin Count :
3
Factory Lead Time :
4 Weeks
Width :
2.64mm
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
25V
Surface Mount :
yes
Terminal Finish :
Tin (Sn)
Element Configuration :
Single
Packaging :
Tape and Reel (TR)
Power - Max :
225mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 2mA 1V
Max Collector Current :
200mA
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Power Dissipation :
300mW
Vce Saturation (Max) @ Ib, Ic :
400mV @ 5mA, 50mA
Mounting Type :
Surface Mount
Number of Terminations :
3
Max Power Dissipation :
225mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
260
Base Part Number :
MMBT4126
Polarity/Channel Type :
PNP
Radiation Hardening :
No
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Number of Pins :
3
Terminal Position :
Dual
hFE Min :
120
Package / Case :
TO-236-3, SC-59, SOT-23-3
ECCN Code :
EAR99
Transition Frequency :
250MHz
Number of Elements :
1
Height :
1.11mm
Published :
2001
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Form :
Gull wing
Gain Bandwidth Product :
250MHz
Collector Base Voltage (VCBO) :
25V
Transistor Type :
PNP
Collector Emitter Breakdown Voltage :
25V
Frequency :
250MHz
Collector Emitter Saturation Voltage :
-400mV
JESD-609 Code :
e3
Emitter Base Voltage (VEBO) :
4V
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT4126LT3G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:3, Base Part Number:MMBT4126, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, MMBT4126LT3G pinout, MMBT4126LT3G datasheet PDF, MMBT4126LT3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT4126LT3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT4126LT3G


PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT4126LT3G Overview


In this device, the DC current gain is 120 @ 2mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

MMBT4126LT3G Features


the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
a transition frequency of 250MHz


MMBT4126LT3G Applications


There are a lot of ON Semiconductor
MMBT4126LT3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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