MMBT4126LT3G
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- Mfr.Part #
- MMBT4126LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.2A SOT23-3
- Stock
- 9,930
- In Stock ：
- 9,930
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.11mm
- Base Part Number :
- MMBT4126
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Transistor Type :
- PNP
- hFE Min :
- 120
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Power Dissipation :
- 300mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 25V
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 25V
- Emitter Base Voltage (VEBO) :
- 4V
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 250MHz
- JESD-609 Code :
- e3
- Transition Frequency :
- 250MHz
- Frequency :
- 250MHz
- Max Collector Current :
- 200mA
- Collector Emitter Saturation Voltage :
- -400mV
- Factory Lead Time :
- 4 Weeks
- Published :
- 2001
- Max Power Dissipation :
- 225mW
- Power - Max :
- 225mW
- Collector Base Voltage (VCBO) :
- 25V
- Radiation Hardening :
- No
- Pin Count :
- 3
- Element Configuration :
- Single
- Length :
- 3.04mm
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Width :
- 2.64mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 1V
- Polarity/Channel Type :
- PNP
- Datasheets
- MMBT4126LT3G
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4126LT3G Overview
In this device, the DC current gain is 120 @ 2mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT4126LT3G Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
a transition frequency of 250MHz
MMBT4126LT3G Applications
There are a lot of ON Semiconductor
MMBT4126LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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