MMBT4126LT1G
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- Mfr.Part #
- MMBT4126LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.2A SOT23-3
- Stock
- 7,131
- In Stock ：
- 7,131
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 225mW
- Power Dissipation :
- 300mW
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 250MHz
- hFE Min :
- 120
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 25V
- Power - Max :
- 225mW
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- -400mV
- Width :
- 2.64mm
- Pbfree Code :
- yes
- Weight :
- 4.535924g
- Collector Emitter Voltage (VCEO) :
- 25V
- Emitter Base Voltage (VEBO) :
- 4V
- Terminal Position :
- Dual
- Pin Count :
- 3
- Surface Mount :
- yes
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 250MHz
- Published :
- 1998
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 200mA
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Breakdown Voltage :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 250MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 1V
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Base Part Number :
- MMBT4126
- Current Rating :
- -200mA
- Height :
- 1.11mm
- Collector Base Voltage (VCBO) :
- 25V
- Length :
- 3.04mm
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -25V
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Datasheets
- MMBT4126LT1G
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4126LT1G Overview
In this device, the DC current gain is 120 @ 2mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT4126LT1G Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT4126LT1G Applications
There are a lot of ON Semiconductor
MMBT4126LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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