MMBT4126
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- Mfr.Part #
- MMBT4126
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.2A SOT23-3
- Stock
- 4,185
- In Stock ：
- 4,185
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- -200mA
- Height :
- 1mm
- Max Collector Current :
- 200mA
- Collector Emitter Voltage (VCEO) :
- 25V
- Collector Emitter Saturation Voltage :
- -400mV
- Factory Lead Time :
- 15 Weeks
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Base Part Number :
- MMBT4126
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn)
- Max Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Published :
- 2008
- Max Breakdown Voltage :
- 25V
- Gain Bandwidth Product :
- 250MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 250MHz
- Frequency :
- 250MHz
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -4V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 300mW
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Width :
- 1.4mm
- Voltage - Rated DC :
- -25V
- Collector Emitter Breakdown Voltage :
- 25V
- Length :
- 3.05mm
- hFE Min :
- 120
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Current Rating :
- -200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 1V
- Weight :
- 7.994566mg
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 25V
- Polarity/Channel Type :
- PNP
- Datasheets
- MMBT4126
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4126-7-F Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 2mA 1V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -200mA.If the emitter base voltage is kept at -4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
MMBT4126-7-F Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -4V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT4126-7-F Applications
There are a lot of Diodes Incorporated
MMBT4126-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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