MMBT4124LT1
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- Mfr.Part #
- MMBT4124LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN GP 20V 200MA SOT-23
- Stock
- 44,718
- In Stock ：
- 44,718
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 120
- Collector Emitter Voltage (VCEO) :
- 25V
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Weight :
- 4.535924g
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Lifecycle Status :
- ACTIVE (Last Updated: 11 hours ago)
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Height :
- 6.35mm
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 300MHz
- Transition Frequency :
- 300MHz
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 225mW
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Voltage - Rated DC :
- 20V
- Max Collector Current :
- 200mA
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 1V
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 25V
- Published :
- 2005
- Base Part Number :
- MMBT4124
- Current Rating :
- 200mA
- Collector Emitter Saturation Voltage :
- 300mV
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 30V
- Power Dissipation :
- 300W
- Frequency :
- 300MHz
- Transistor Type :
- NPN
- Width :
- 6.35mm
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Length :
- 8.89mm
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 25V
- Datasheets
- MMBT4124LT1
MMBT4124LT1 Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4124LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 200mA volts.
MMBT4124LT1G Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 300MHz
MMBT4124LT1G Applications
There are a lot of ON Semiconductor
MMBT4124LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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