MMBT4124
- Mfr.Part #
- MMBT4124
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.2A SOT23-3
- Stock
- 29,050
- In Stock :
- 29,050
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mount :
- Surface Mount
- Supplier Device Package :
- SOT-23-3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 200mA
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 200mA
- Polarity :
- NPN
- Height :
- 930μm
- Termination :
- SMD/SMT
- hFE Min :
- 120
- Collector Emitter Breakdown Voltage :
- 25V
- Max Frequency :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 1V
- Power - Max :
- 350mW
- Number of Pins :
- 3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Gain Bandwidth Product :
- 300MHz
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 300mV
- Base Part Number :
- MMBT4124
- Frequency - Transition :
- 300MHz
- Max Breakdown Voltage :
- 25V
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Voltage - Rated DC :
- 25V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Width :
- 1.3mm
- Length :
- 2.92mm
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2001
- Power Dissipation :
- 350mW
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Voltage (VCEO) :
- 25V
- Weight :
- 30mg
- Max Collector Current :
- 200mA
- Min Operating Temperature :
- -55°C
- Frequency :
- 300MHz
- Max Power Dissipation :
- 350mW
- Datasheets
- MMBT4124

NPN -55°C~150°C TJ 50nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4124 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 1V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can be broken down at a voltage of 25V volts.There is no device package available from the supplier for this product.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 200mA volts.
MMBT4124 Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
the supplier device package of SOT-23-3
MMBT4124 Applications
There are a lot of ON Semiconductor
MMBT4124 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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