MMBT3906WT1G
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- Mfr.Part #
- MMBT3906WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SC70-3
- Stock
- 14,598
- In Stock ：
- 14,598
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 150mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Turn On Time-Max (ton) :
- 70ns
- Published :
- 2006
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 150mW
- Pbfree Code :
- yes
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Height :
- 1mm
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- -200mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 250MHz
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Package / Case :
- SC-70, SOT-323
- Number of Pins :
- 3
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 250MHz
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 40V
- Weight :
- 4.535924g
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Voltage - Rated DC :
- -40V
- Terminal Position :
- Dual
- Base Part Number :
- MMBT3906
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Factory Lead Time :
- 5 Weeks
- Collector Emitter Saturation Voltage :
- -400mV
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 250MHz
- Width :
- 1.35mm
- Length :
- 2.2mm
- hFE Min :
- 60
- Max Collector Current :
- 200mA
- Collector Emitter Voltage (VCEO) :
- 40V
- Datasheets
- MMBT3906WT1G
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMBT3906WT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 200mA volts.
MMBT3906WT1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT3906WT1G Applications
There are a lot of ON Semiconductor
MMBT3906WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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