MMBT3906WT1
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- Mfr.Part #
- MMBT3906WT1
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS SS GP PNP 40V SOT323
- Stock
- 32,327
- In Stock ：
- 32,327
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Collector Emitter Saturation Voltage :
- -400mV
- Transition Frequency :
- 250MHz
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.35mm
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Pin Count :
- 3
- Max Power Dissipation :
- 150mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Current Rating :
- -200mA
- Polarity/Channel Type :
- PNP
- Published :
- 2006
- Package / Case :
- SC-70, SOT-323
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- hFE Min :
- 60
- Radiation Hardening :
- No
- Frequency :
- 250MHz
- Number of Terminations :
- 3
- Factory Lead Time :
- 5 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Height :
- 1mm
- Voltage - Rated DC :
- -40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 250MHz
- Weight :
- 4.535924g
- Power Dissipation :
- 150mW
- Base Part Number :
- MMBT3906
- Number of Elements :
- 1
- Max Collector Current :
- 200mA
- Terminal Form :
- Gull wing
- Turn On Time-Max (ton) :
- 70ns
- Length :
- 2.2mm
- Datasheets
- MMBT3906WT1
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMBT3906WT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 200mA volts.
MMBT3906WT1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT3906WT1G Applications
There are a lot of ON Semiconductor
MMBT3906WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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