MMBT3906SL
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- Mfr.Part #
- MMBT3906SL
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- SOT-923F
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT923F
- Stock
- 157,865
- In Stock ：
- 157,865
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- -40V
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Transition Frequency :
- 250MHz
- Collector Emitter Breakdown Voltage :
- 40V
- Max Breakdown Voltage :
- 40V
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Terminal Form :
- Flat
- Operating Temperature :
- 150°C TJ
- Width :
- 650μm
- Power Dissipation :
- 227mW
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- -5V
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Frequency :
- 250MHz
- Length :
- 850μm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Gain Bandwidth Product :
- 250MHz
- Package / Case :
- SOT-923F
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- hFE Min :
- 100
- Published :
- 2012
- Turn On Time-Max (ton) :
- 70ns
- Weight :
- 22mg
- Number of Terminations :
- 3
- Height :
- 380μm
- Collector Emitter Voltage (VCEO) :
- 40V
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 18 hours ago)
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -250mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Max Power Dissipation :
- 227mW
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Max Collector Current :
- 200mA
- Base Part Number :
- MMBT3906
- Datasheets
- MMBT3906SL
PNP 150°C TJ 1 Elements 3 Terminations SILICON PNP SOT-923F Tape & Reel (TR) Surface Mount
MMBT3906SL Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
MMBT3906SL Applications
There are a lot of ON Semiconductor
MMBT3906SL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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