MMBT3906SL
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- Mfr.Part #
- MMBT3906SL
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- SOT-923F
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT923F
- Stock
- 157,865
- In Stock ：
- 157,865
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -250mV
- Max Breakdown Voltage :
- 40V
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 40V
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Frequency :
- 250MHz
- Turn On Time-Max (ton) :
- 70ns
- Terminal Position :
- Dual
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- -40V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Transition Frequency :
- 250MHz
- Weight :
- 22mg
- Base Part Number :
- MMBT3906
- Emitter Base Voltage (VEBO) :
- -5V
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Width :
- 650μm
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 40V
- Package / Case :
- SOT-923F
- Terminal Form :
- Flat
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Published :
- 2012
- Power Dissipation :
- 227mW
- Max Collector Current :
- 200mA
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- hFE Min :
- 100
- Max Power Dissipation :
- 227mW
- Height :
- 380μm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 18 hours ago)
- Transistor Application :
- SWITCHING
- Length :
- 850μm
- Gain Bandwidth Product :
- 250MHz
- Datasheets
- MMBT3906SL
PNP 150°C TJ 1 Elements 3 Terminations SILICON PNP SOT-923F Tape & Reel (TR) Surface Mount
MMBT3906SL Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
MMBT3906SL Applications
There are a lot of ON Semiconductor
MMBT3906SL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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