MMBT3906SL
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- Mfr.Part #
- MMBT3906SL
- Manufacturer
- onsemi
- Package / Case
- SOT-923F
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT923F
- Stock
- 157,865
- In Stock ：
- 157,865
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 850μm
- Width :
- 650μm
- Height :
- 380μm
- Weight :
- 22mg
- Frequency :
- 250MHz
- Max Collector Current :
- 200mA
- Collector Base Voltage (VCBO) :
- -40V
- Turn On Time-Max (ton) :
- 70ns
- Max Power Dissipation :
- 227mW
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 250MHz
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -250mV
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 40V
- Collector Emitter Voltage (VCEO) :
- 40V
- Package / Case :
- SOT-923F
- Base Part Number :
- MMBT3906
- Number of Elements :
- 1
- Published :
- 2012
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- -5V
- hFE Min :
- 100
- Mount :
- Surface Mount
- Transition Frequency :
- 250MHz
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Power Dissipation :
- 227mW
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 18 hours ago)
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Datasheets
- MMBT3906SL
PNP 150°C TJ 1 Elements 3 Terminations SILICON PNP SOT-923F Tape & Reel (TR) Surface Mount
MMBT3906SL Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
MMBT3906SL Applications
There are a lot of ON Semiconductor
MMBT3906SL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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