MMBT3906SL
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- Mfr.Part #
- MMBT3906SL
- Manufacturer
- onsemi
- Package / Case
- SOT-923F
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT923F
- Stock
- 157,865
- In Stock ：
- 157,865
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Form :
- Flat
- Transistor Application :
- SWITCHING
- Frequency :
- 250MHz
- JESD-609 Code :
- e3
- Package / Case :
- SOT-923F
- Terminal Finish :
- Tin (Sn)
- Height :
- 380μm
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Base Part Number :
- MMBT3906
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 40V
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- -5V
- Max Collector Current :
- 200mA
- Width :
- 650μm
- Number of Pins :
- 3
- Number of Elements :
- 1
- Published :
- 2012
- Pbfree Code :
- yes
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 250MHz
- Length :
- 850μm
- Transition Frequency :
- 250MHz
- Packaging :
- Tape and Reel (TR)
- Weight :
- 22mg
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Collector Emitter Voltage (VCEO) :
- 40V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 18 hours ago)
- Max Power Dissipation :
- 227mW
- Number of Terminations :
- 3
- Turn On Time-Max (ton) :
- 70ns
- Collector Base Voltage (VCBO) :
- -40V
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 227mW
- Collector Emitter Saturation Voltage :
- -250mV
- hFE Min :
- 100
- Datasheets
- MMBT3906SL
PNP 150°C TJ 1 Elements 3 Terminations SILICON PNP SOT-923F Tape & Reel (TR) Surface Mount
MMBT3906SL Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
MMBT3906SL Applications
There are a lot of ON Semiconductor
MMBT3906SL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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