MMBT3906LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

VCEsat-Max :

0.4 V

Factory Lead Time :

10 Weeks

Packaging :

Tape and Reel (TR)

Transistor Type :

PNP

Max Power Dissipation :

300mW

Power Dissipation :

225mW

Number of Pins :

3

Frequency :

250MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Pin Count :

3

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

ECCN Code :

EAR99

Contact Plating :

Tin

Collector-Base Capacitance-Max :

4.5pF

Radiation Hardening :

No

Turn On Time-Max (ton) :

70ns

Collector Emitter Breakdown Voltage :

-40V

Height :

1.11mm

Collector Base Voltage (VCBO) :

-40V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Voltage - Rated DC :

-40V

Published :

2004

Polarity/Channel Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

-40V

Lead Free :

Lead Free

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Number of Terminations :

3

hFE Min :

30

Length :

2.9mm

Number of Elements :

1

Collector Emitter Saturation Voltage :

-250mV

Current - Collector (Ic) (Max) :

200mA

Max Breakdown Voltage :

40V

Gain Bandwidth Product :

250MHz

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Max Collector Current :

-200mA

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Mounting Type :

Surface Mount

Terminal Position :

Dual

Element Configuration :

Single

Width :

1.3mm

JESD-609 Code :

e3

Current Rating :

-200mA

Terminal Form :

Gull wing

Transition Frequency :

250MHz

Base Part Number :

MMBT3906

Emitter Base Voltage (VEBO) :

-5V