MMBT3906LP-7B
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- Mfr.Part #
- MMBT3906LP-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A 3DFN
- Stock
- 7,236
- In Stock ：
- 7,236
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 40V
- Series :
- Automotive, AEC-Q101
- Max Power Dissipation :
- 250mW
- hFE Min :
- 100
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 40V
- VCEsat-Max :
- 0.4 V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Configuration :
- Single
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Max Collector Current :
- 200mA
- Published :
- 2012
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Voltage (VCEO) :
- 400mV
- Frequency - Transition :
- 300MHz
- JESD-609 Code :
- e4
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Package / Case :
- 3-UFDFN
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Transition Frequency :
- 300MHz
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Continuous Collector Current :
- -200mA
- Factory Lead Time :
- 15 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Terminal Position :
- BOTTOM
- Power - Max :
- 250mW
- Collector-Base Capacitance-Max :
- 4.5pF
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Additional Feature :
- High Reliability
- Base Part Number :
- MMBT3906
- Radiation Hardening :
- No
- Turn On Time-Max (ton) :
- 70ns
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- MMBT3906LP-7B
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP 3-UFDFN Tape & Reel (TR) Surface Mount
MMBT3906LP-7B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -200mA for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
MMBT3906LP-7B Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
MMBT3906LP-7B Applications
There are a lot of Diodes Incorporated
MMBT3906LP-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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