MMBT3906LP-7
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- Mfr.Part #
- MMBT3906LP-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A 3DFN
- Stock
- 63,710
- In Stock ：
- 63,710
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Series :
- Automotive, AEC-Q101
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Continuous Collector Current :
- -200mA
- Manufacturer Package Identifier :
- MMBT3906LP-7
- Base Part Number :
- MMBT3906
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Turn On Time-Max (ton) :
- 70ns
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Terminations :
- 3
- Max Collector Current :
- 200mA
- Power - Max :
- 250mW
- Published :
- 2012
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Mount :
- Surface Mount
- JESD-609 Code :
- e4
- Max Power Dissipation :
- 250mW
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- -5V
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- COLLECTOR
- Additional Feature :
- High Reliability
- Collector-Base Capacitance-Max :
- 4.5pF
- Gain Bandwidth Product :
- 300MHz
- Transition Frequency :
- 300MHz
- Collector Emitter Voltage (VCEO) :
- 400mV
- Factory Lead Time :
- 14 Weeks
- Max Breakdown Voltage :
- 40V
- Collector Emitter Saturation Voltage :
- -400mV
- hFE Min :
- 30
- Collector Base Voltage (VCBO) :
- -40V
- VCEsat-Max :
- 0.4 V
- Package / Case :
- 3-XFDFN
- Datasheets
- MMBT3906LP-7
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XFDFN Tape & Reel (TR) Surface Mount
MMBT3906LP-7 Overview
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 200mA volts.
MMBT3906LP-7 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
MMBT3906LP-7 Applications
There are a lot of Diodes Incorporated
MMBT3906LP-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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