MMBT3906FZ-7B
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- Mfr.Part #
- MMBT3906FZ-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A 3DFN
- Stock
- 19,530
- In Stock ：
- 19,530
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 400mV
- Mount :
- Surface Mount
- Number of Elements :
- 1
- JESD-609 Code :
- e4
- Emitter Base Voltage (VEBO) :
- -6V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2013
- Series :
- Automotive, AEC-Q101
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Package / Case :
- 3-XFDFN
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 3
- hFE Min :
- 100
- Max Breakdown Voltage :
- 40V
- Power - Max :
- 435mW
- Collector Emitter Saturation Voltage :
- -400mV
- Max Collector Current :
- 200mA
- Frequency - Transition :
- 280MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Collector Current :
- -200mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- NO LEAD
- Transition Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- -40V
- Gain Bandwidth Product :
- 250MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Max Power Dissipation :
- 435mW
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Turn On Time-Max (ton) :
- 70ns
- Datasheets
- MMBT3906FZ-7B
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XFDFN Tape & Reel (TR) Surface Mount
MMBT3906FZ-7B Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of -400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -200mA.Keeping the emitter base voltage at -6V can result in a high level of efficiency.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 200mA volts.
MMBT3906FZ-7B Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
a transition frequency of 300MHz
MMBT3906FZ-7B Applications
There are a lot of Diodes Incorporated
MMBT3906FZ-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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