MMBT3906-G
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- Mfr.Part #
- MMBT3906-G
- Manufacturer
- Comchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT23-3
- Stock
- 191,674
- In Stock ：
- 191,674
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- Manufacturer :
- Comchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100μA
- JESD-609 Code :
- e3
- Published :
- 2001
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- -200mA
- Max Collector Current :
- 200mA
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 40V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Factory Lead Time :
- 10 Weeks
- JESD-30 Code :
- R-PDSO-G3
- Turn On Time-Max (ton) :
- 70ns
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Power - Max :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 300MHz
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- -5V
- Transition Frequency :
- 300MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 400mV
- Weight :
- 200.998119mg
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn Off Time-Max (toff) :
- 300ns
- Datasheets
- MMBT3906-G
PNP -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3906-G Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906-G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
MMBT3906-G Applications
There are a lot of Comchip Technology
MMBT3906-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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