MMBT3906

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Mfr.Part #
MMBT3906
Manufacturer
YANGJIE
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
SOT-23 PNP 0.3W -0.2A -40V Trans
Stock
15,000
In Stock :
15,000

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Manufacturer :
YANGJIE
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
300MHz
JESD-609 Code :
e3
Published :
2001
Frequency - Transition :
300MHz
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
PNP
Turn Off Time-Max (toff) :
300ns
Max Power Dissipation :
200mW
Mount :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
400mV
Vce Saturation (Max) @ Ib, Ic :
400mV @ 5mA, 50mA
Terminal Finish :
Tin (Sn)
Collector Emitter Breakdown Voltage :
40V
Packaging :
Tape and Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA 1V
Terminal Position :
Dual
Weight :
200.998119mg
RoHS Status :
ROHS3 Compliant
Max Collector Current :
200mA
Terminal Form :
Gull wing
Current - Collector Cutoff (Max) :
100μA
Number of Terminations :
3
Emitter Base Voltage (VEBO) :
-5V
Transistor Element Material :
SILICON
Power - Max :
200mW
Number of Elements :
1
Turn On Time-Max (ton) :
70ns
Transistor Type :
PNP
Continuous Collector Current :
-200mA
Package / Case :
TO-236-3, SC-59, SOT-23-3
Factory Lead Time :
10 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PDSO-G3
Datasheets
MMBT3906
Introducing Transistors - Bipolar (BJT) - Single YANGJIE MMBT3906 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, MMBT3906 pinout, MMBT3906 datasheet PDF, MMBT3906 amp .Beyond Transistors - Bipolar (BJT) - Single YANGJIE MMBT3906 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT3906-G Overview


In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

MMBT3906-G Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz


MMBT3906-G Applications


There are a lot of Comchip Technology
MMBT3906-G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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