MMBT3906
- Mfr.Part #
- MMBT3906
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 PNP 0.3W -0.2A -40V Trans
- Stock
- 15,000
- In Stock :
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 300MHz
- JESD-609 Code :
- e3
- Published :
- 2001
- Frequency - Transition :
- 300MHz
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Turn Off Time-Max (toff) :
- 300ns
- Max Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 400mV
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Terminal Position :
- Dual
- Weight :
- 200.998119mg
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 200mA
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100μA
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- Power - Max :
- 200mW
- Number of Elements :
- 1
- Turn On Time-Max (ton) :
- 70ns
- Transistor Type :
- PNP
- Continuous Collector Current :
- -200mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 10 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PDSO-G3
- Datasheets
- MMBT3906
PNP -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3906-G Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906-G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
MMBT3906-G Applications
There are a lot of Comchip Technology
MMBT3906-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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