MMBT3906
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- Mfr.Part #
- MMBT3906
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT23-3
- Stock
- 20,299
- In Stock ：
- 20,299
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 200mA
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 400mV
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 10 Weeks
- Transistor Element Material :
- SILICON
- Turn Off Time-Max (toff) :
- 300ns
- Continuous Collector Current :
- -200mA
- Published :
- 2001
- JESD-30 Code :
- R-PDSO-G3
- Transition Frequency :
- 300MHz
- Current - Collector Cutoff (Max) :
- 100μA
- Number of Elements :
- 1
- Turn On Time-Max (ton) :
- 70ns
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Frequency - Transition :
- 300MHz
- Weight :
- 200.998119mg
- Max Power Dissipation :
- 200mW
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Power - Max :
- 200mW
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Datasheets
- MMBT3906
PNP -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3906-G Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906-G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
MMBT3906-G Applications
There are a lot of Comchip Technology
MMBT3906-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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