MMBT3906
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- Mfr.Part #
- MMBT3906
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT23-3
- Stock
- 38,804
- In Stock ：
- 38,804
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 40V
- Current - Collector Cutoff (Max) :
- 100μA
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- -5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 300MHz
- Turn Off Time-Max (toff) :
- 300ns
- Max Collector Current :
- 200mA
- Mount :
- Surface Mount
- Continuous Collector Current :
- -200mA
- Number of Terminations :
- 3
- Published :
- 2001
- Turn On Time-Max (ton) :
- 70ns
- Number of Elements :
- 1
- Max Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 400mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- PNP
- Weight :
- 200.998119mg
- Power - Max :
- 200mW
- Transistor Type :
- PNP
- Frequency - Transition :
- 300MHz
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 10 Weeks
- JESD-30 Code :
- R-PDSO-G3
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MMBT3906
PNP -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3906-G Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906-G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
MMBT3906-G Applications
There are a lot of Comchip Technology
MMBT3906-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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