MMBT3906,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

60

Collector Emitter Voltage (VCEO) :

-40V

Emitter Base Voltage (VEBO) :

-6V

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Height :

1.1mm

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Number of Terminations :

3

Collector Emitter Saturation Voltage :

-400mV

RoHS Status :

ROHS3 Compliant

Published :

2009

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Base Part Number :

MMBT3906

Current - Collector Cutoff (Max) :

50nA ICBO

Pin Count :

3

Collector Base Voltage (VCBO) :

-40V

Surface Mount :

yes

Polarity/Channel Type :

PNP

Voltage - Collector Emitter Breakdown (Max) :

40V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

-200mA

Mounting Type :

Surface Mount

Transistor Type :

PNP

Number of Pins :

3

Power Dissipation :

250mW

JESD-609 Code :

e3

Ambient Temperature Range High :

150°C

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

Configuration :

Single

Number of Elements :

1

Operating Temperature :

150°C TJ

Factory Lead Time :

4 Weeks

Gain Bandwidth Product :

250MHz

Max Junction Temperature (Tj) :

150°C

Turn On Time-Max (ton) :

70ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

200mA

ECCN Code :

EAR99

Transition Frequency :

250MHz

Series :

Automotive, AEC-Q101

Qualification Status :

Not Qualified