MMBT3906,215
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- Mfr.Part #
- MMBT3906,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NOW NEXPERIA MMBT3906 - SMALL SI
- Stock
- 1,747
- In Stock ：
- 1,747
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 60
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Published :
- 2009
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 250MHz
- Ambient Temperature Range High :
- 150°C
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Qualification Status :
- Not Qualified
- Base Part Number :
- MMBT3906
- Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Surface Mount :
- yes
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Collector Base Voltage (VCBO) :
- -40V
- Height :
- 1.1mm
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Power Dissipation :
- 250mW
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- -40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Collector Emitter Saturation Voltage :
- -400mV
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- -6V
- Current - Collector (Ic) (Max) :
- 200mA
- Max Collector Current :
- -200mA
- Max Junction Temperature (Tj) :
- 150°C
- Series :
- Automotive, AEC-Q101
- Transition Frequency :
- 250MHz
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Turn On Time-Max (ton) :
- 70ns
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Elements :
- 1
- Datasheets
- MMBT3906,215
PNP 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3906,215 Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.There is a 40V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as -200mA volts at Single BJT transistors maximum.
MMBT3906,215 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
a transition frequency of 250MHz
MMBT3906,215 Applications
There are a lot of Nexperia USA Inc.
MMBT3906,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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