MMBT3904SL
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- Mfr.Part #
- MMBT3904SL
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- SOT-923F
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SOT923F
- Stock
- 139,080
- In Stock ：
- 139,080
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 100
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Type :
- NPN
- Base Part Number :
- MMBT3904
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 60V
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 300mV
- Length :
- 850μm
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Factory Lead Time :
- 7 Weeks
- Published :
- 2008
- Width :
- 650μm
- Collector Emitter Breakdown Voltage :
- 40V
- Gain Bandwidth Product :
- 300MHz
- Turn On Time-Max (ton) :
- 70ns
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 40V
- Max Collector Current :
- 200mA
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Number of Terminations :
- 3
- Frequency :
- 300MHz
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 227mW
- Package / Case :
- SOT-923F
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 17 hours ago)
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Turn Off Time-Max (toff) :
- 250ns
- Transition Frequency :
- 300MHz
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Height :
- 380μm
- Emitter Base Voltage (VEBO) :
- 6V
- Weight :
- 22mg
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Power Dissipation :
- 227mW
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Datasheets
- MMBT3904SL
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN SOT-923F Tape & Reel (TR) Surface Mount
MMBT3904SL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 200mA volts.
MMBT3904SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904SL Applications
There are a lot of ON Semiconductor
MMBT3904SL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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