MMBT3904SL
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- Mfr.Part #
- MMBT3904SL
- Manufacturer
- onsemi
- Package / Case
- SOT-923F
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SOT923F
- Stock
- 103,212
- In Stock ：
- 103,212
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Length :
- 850μm
- Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Turn Off Time-Max (toff) :
- 250ns
- Weight :
- 22mg
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-923F
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 7 Weeks
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Published :
- 2008
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Width :
- 650μm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Gain Bandwidth Product :
- 300MHz
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 300mV
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 17 hours ago)
- Base Part Number :
- MMBT3904
- Turn On Time-Max (ton) :
- 70ns
- Terminal Form :
- Flat
- Number of Pins :
- 3
- Transition Frequency :
- 300MHz
- Max Power Dissipation :
- 227mW
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Height :
- 380μm
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 100
- Power Dissipation :
- 227mW
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Max Collector Current :
- 200mA
- Operating Temperature :
- 150°C TJ
- Datasheets
- MMBT3904SL
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN SOT-923F Tape & Reel (TR) Surface Mount
MMBT3904SL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 200mA volts.
MMBT3904SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904SL Applications
There are a lot of ON Semiconductor
MMBT3904SL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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