MMBT3904SL
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- Mfr.Part #
- MMBT3904SL
- Manufacturer
- onsemi
- Package / Case
- SOT-923F
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SOT923F
- Stock
- 103,212
- In Stock ：
- 103,212
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 300MHz
- Power Dissipation :
- 227mW
- Base Part Number :
- MMBT3904
- Max Breakdown Voltage :
- 40V
- Factory Lead Time :
- 7 Weeks
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Max Power Dissipation :
- 227mW
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Weight :
- 22mg
- Frequency :
- 300MHz
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 40V
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 300MHz
- Height :
- 380μm
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 40V
- Published :
- 2008
- Max Collector Current :
- 200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Contact Plating :
- Tin
- Length :
- 850μm
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 60V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 17 hours ago)
- Turn Off Time-Max (toff) :
- 250ns
- Package / Case :
- SOT-923F
- Collector Emitter Saturation Voltage :
- 300mV
- hFE Min :
- 100
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Turn On Time-Max (ton) :
- 70ns
- REACH SVHC :
- No SVHC
- Width :
- 650μm
- Number of Terminations :
- 3
- Terminal Form :
- Flat
- Datasheets
- MMBT3904SL
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN SOT-923F Tape & Reel (TR) Surface Mount
MMBT3904SL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 200mA volts.
MMBT3904SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904SL Applications
There are a lot of ON Semiconductor
MMBT3904SL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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