MMBT3904LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Terminal Position :

Dual

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

6V

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

40V

Surface Mount :

yes

Max Power Dissipation :

300mW

Collector Base Voltage (VCBO) :

60V

Collector Emitter Voltage (VCEO) :

40V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Contact Plating :

Tin

Power Dissipation :

300mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Max Breakdown Voltage :

40V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Width :

1.4mm

Height :

1.01mm

Pbfree Code :

yes

Lead Free :

Lead Free

Base Part Number :

MMBT3904

Element Configuration :

Single

JESD-609 Code :

e3

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Max (toff) :

250ns

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

300mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Gain Bandwidth Product :

300MHz

Frequency :

300MHz

Polarity/Channel Type :

NPN

Turn On Time-Max (ton) :

70ns

ECCN Code :

EAR99

Number of Pins :

3

Max Collector Current :

200mA

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Number of Elements :

1

hFE Min :

40

RoHS Status :

ROHS3 Compliant

Transition Frequency :

300MHz

Factory Lead Time :

10 Weeks

Length :

3.04mm

Transistor Element Material :

SILICON

Current Rating :

200mA

Voltage - Rated DC :

40V

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3