MMBT3904LT1HTSA1
- Mfr.Part #
- MMBT3904LT1HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SOT23
- Stock
- 4,370
- In Stock :
- 4,370
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 300mV
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn Off Time-Max (toff) :
- 250ns
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Published :
- 2007
- Max Power Dissipation :
- 330mW
- Terminal Form :
- Gull wing
- Current Rating :
- 200mA
- Max Breakdown Voltage :
- 40V
- Max Collector Current :
- 200mA
- Transistor Application :
- SWITCHING
- Height :
- 1.1mm
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Frequency :
- 300MHz
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Junction Temperature (Tj) :
- 150°C
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Transition Frequency :
- 300MHz
- Power Dissipation :
- 330mW
- Collector Emitter Breakdown Voltage :
- 40V
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 300MHz
- hFE Min :
- 30
- Turn On Time-Max (ton) :
- 70ns
- Base Part Number :
- MMBT3904
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 60V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 40V
- Operating Temperature :
- 150°C TJ
- Datasheets
- MMBT3904LT1HTSA1
MMBT3904LT1HTSA1 Documents

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3904LT1HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 200mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
MMBT3904LT1HTSA1 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
MMBT3904LT1HTSA1 Applications
There are a lot of Infineon Technologies
MMBT3904LT1HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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