MMBT3904LP-7
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- Mfr.Part #
- MMBT3904LP-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A 3DFN
- Stock
- 128,744
- In Stock ：
- 128,744
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Max Power Dissipation :
- 250mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Length :
- 1mm
- JESD-609 Code :
- e4
- Gain Bandwidth Product :
- 300MHz
- ECCN Code :
- EAR99
- Additional Feature :
- High Reliability
- Width :
- 600μm
- Series :
- Automotive, AEC-Q101
- Turn On Time-Max (ton) :
- 70ns
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Mounting Type :
- Surface Mount
- Base Part Number :
- MMBT3904
- Case Connection :
- COLLECTOR
- Collector-Base Capacitance-Max :
- 4pF
- Number of Terminations :
- 3
- Turn Off Time-Max (toff) :
- 250ns
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 200mA
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Number of Elements :
- 1
- Package / Case :
- 3-UFDFN
- Pin Count :
- 3
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Max Collector Current :
- 200mA
- Published :
- 2009
- REACH SVHC :
- No SVHC
- Height :
- 500μm
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 40V
- Transition Frequency :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 7.994566mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 300mV
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 14 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- MMBT3904LP-7
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN 3-UFDFN Tape & Reel (TR) Surface Mount
MMBT3904LP-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 300MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMBT3904LP-7 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904LP-7 Applications
There are a lot of Diodes Incorporated
MMBT3904LP-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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