MMBT3640
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- Mfr.Part #
- MMBT3640
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 12V 0.2A SOT23-3
- Stock
- 3,182
- In Stock ：
- 3,182
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.3mm
- Terminal Form :
- Gull wing
- Weight :
- 30mg
- Collector Emitter Breakdown Voltage :
- 12V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2017
- Max Power Dissipation :
- 225mW
- Collector Base Voltage (VCBO) :
- -12V
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 300mV
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -12V
- Height :
- 930μm
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 12V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MMBT3640
- Collector Emitter Saturation Voltage :
- 600mV
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 39 Weeks
- Transistor Type :
- PNP
- hFE Min :
- 30
- Gain Bandwidth Product :
- 500MHz
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- Polarity/Channel Type :
- PNP
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 500MHz
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 12V
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Turn On Time-Max (ton) :
- 25ns
- Lead Free :
- Lead Free
- Additional Feature :
- HIGH SPEED SATURATED SWITCHING
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- -4V
- Current - Collector Cutoff (Max) :
- 10nA
- Current Rating :
- -200mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- ECCN Code :
- EAR99
- Length :
- 2.92mm
- Number of Pins :
- 3
- Frequency :
- 500MHz
- Number of Terminations :
- 3
- Power Dissipation :
- 225mW
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 200mA
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- MMBT3640
MMBT3640 Documents
PNP -55°C~150°C TJ 10nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3640 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 10mA 300mV.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -4V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -200mA.In the part, the transition frequency is 500MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
MMBT3640 Features
the DC current gain for this device is 30 @ 10mA 300mV
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at -4V
the current rating of this device is -200mA
a transition frequency of 500MHz
MMBT3640 Applications
There are a lot of ON Semiconductor
MMBT3640 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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