MMBT3416LT3G
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- Mfr.Part #
- MMBT3416LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.1A SOT23-3
- Stock
- 40,029
- In Stock ：
- 40,029
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 4V
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Length :
- 3.04mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 2mA 4.5V
- Frequency :
- 75MHz
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 3mA, 50mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 225mW
- Element Configuration :
- Single
- Height :
- 1.11mm
- Power Dissipation :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 40V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Voltage - Rated DC :
- 25V
- Number of Elements :
- 1
- Base Part Number :
- MMBT3416
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 75MHz
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 4V
- Width :
- 2.64mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 300mV
- hFE Min :
- 75
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- 100mA
- Published :
- 2008
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Datasheets
- MMBT3416LT3G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3416LT3G Overview
This device has a DC current gain of 75 @ 2mA 4.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 3mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 100mA volts is possible.
MMBT3416LT3G Features
the DC current gain for this device is 75 @ 2mA 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 3mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
MMBT3416LT3G Applications
There are a lot of ON Semiconductor
MMBT3416LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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