MMBT3416LT3

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Mfr.Part #
MMBT3416LT3
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN GP 25V 100MA SOT-23
Stock
2,655
In Stock :
2,655

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Surface Mount
Published :
2008
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Terminal Position :
Dual
Time@Peak Reflow Temperature-Max (s) :
40
Polarity/Channel Type :
NPN
Base Part Number :
MMBT3416
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Voltage - Rated DC :
25V
Factory Lead Time :
2 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Frequency :
75MHz
Collector Emitter Saturation Voltage :
300mV
Lead Free :
Lead Free
Element Configuration :
Single
Radiation Hardening :
No
JESD-609 Code :
e3
Power Dissipation :
300mW
Emitter Base Voltage (VEBO) :
4V
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 3mA, 50mA
Collector Emitter Voltage (VCEO) :
40V
Transistor Application :
AMPLIFIER
Peak Reflow Temperature (Cel) :
260
Length :
3.04mm
ECCN Code :
EAR99
Pbfree Code :
yes
Number of Terminations :
3
Current Rating :
100mA
Max Power Dissipation :
225mW
Package / Case :
TO-236-3, SC-59, SOT-23-3
hFE Min :
75
Terminal Form :
Gull wing
Collector Emitter Breakdown Voltage :
40V
Transistor Type :
NPN
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
75 @ 2mA 4.5V
Pin Count :
3
Max Collector Current :
100mA
Width :
2.64mm
Collector Base Voltage (VCBO) :
4V
Gain Bandwidth Product :
75MHz
Current - Collector Cutoff (Max) :
100nA ICBO
Height :
1.11mm
Surface Mount :
yes
Packaging :
Tape and Reel (TR)
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT3416LT3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:MMBT3416, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, MMBT3416LT3 pinout, MMBT3416LT3 datasheet PDF, MMBT3416LT3 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT3416LT3 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT3416LT3G Overview


This device has a DC current gain of 75 @ 2mA 4.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 3mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 100mA volts is possible.

MMBT3416LT3G Features


the DC current gain for this device is 75 @ 2mA 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 3mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA


MMBT3416LT3G Applications


There are a lot of ON Semiconductor
MMBT3416LT3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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