MMBT3416LT3
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- Mfr.Part #
- MMBT3416LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN GP 25V 100MA SOT-23
- Stock
- 2,655
- In Stock ：
- 2,655
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- MMBT3416
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- Published :
- 2008
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 3mA, 50mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 300mW
- hFE Min :
- 75
- Collector Emitter Voltage (VCEO) :
- 40V
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Frequency :
- 75MHz
- Collector Base Voltage (VCBO) :
- 4V
- Length :
- 3.04mm
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Width :
- 2.64mm
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 100mA
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 75MHz
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 300mV
- Factory Lead Time :
- 2 Weeks
- Emitter Base Voltage (VEBO) :
- 4V
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 2mA 4.5V
- Current Rating :
- 100mA
- Max Power Dissipation :
- 225mW
- Element Configuration :
- Single
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 25V
- Height :
- 1.11mm
- Datasheets
- MMBT3416LT3
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3416LT3G Overview
This device has a DC current gain of 75 @ 2mA 4.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 3mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 100mA volts is possible.
MMBT3416LT3G Features
the DC current gain for this device is 75 @ 2mA 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 3mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
MMBT3416LT3G Applications
There are a lot of ON Semiconductor
MMBT3416LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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