MMBT2907AWT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

MMBT2907A

Factory Lead Time :

5 Weeks

Transistor Application :

AMPLIFIER

Collector Emitter Voltage (VCEO) :

60V

Length :

2.2mm

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Cut Tape (CT)

Radiation Hardening :

No

Turn On Time-Max (ton) :

45ns

Collector Emitter Breakdown Voltage :

60V

Published :

2004

Max Collector Current :

600mA

Lead Free :

Lead Free

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Voltage - Rated DC :

-60V

Height :

700μm

Package / Case :

SC-70, SOT-323

Collector Emitter Saturation Voltage :

-1.6V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Number of Terminations :

3

Current Rating :

-600mA

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Polarity/Channel Type :

PNP

Number of Pins :

3

Power Dissipation :

150mW

Contact Plating :

Tin

Gain Bandwidth Product :

200MHz

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Terminal Form :

Gull wing

Transistor Type :

PNP

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Max Breakdown Voltage :

60V

hFE Min :

75

Transition Frequency :

200MHz

Width :

1.35mm

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

150mW

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Frequency :

200MHz

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

60V