MMBT2907AT-7-F
- Mfr.Part #
- MMBT2907AT-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SOT523
- Stock
- 12,682
- In Stock :
- 12,682
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Pins :
- 3
- Length :
- 1.6mm
- Mounting Type :
- Surface Mount
- Weight :
- 2.012816mg
- Height :
- 900μm
- Power Dissipation :
- 150mW
- Width :
- 800μm
- Package / Case :
- SOT-523
- Transistor Type :
- PNP
- Continuous Collector Current :
- -600mA
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- -60V
- Current Rating :
- -600mA
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Series :
- Automotive, AEC-Q101
- Collector Base Voltage (VCBO) :
- -60V
- Collector Emitter Breakdown Voltage :
- -60V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 200MHz
- Base Part Number :
- MMBT2907A
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Power Dissipation :
- 150mW
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- -600mA
- Factory Lead Time :
- 15 Weeks
- Turn On Time-Max (ton) :
- 45ns
- Current - Collector (Ic) (Max) :
- 600mA
- Transition Frequency :
- 200MHz
- Terminal Finish :
- Matte Tin (Sn) - annealed
- ECCN Code :
- EAR99
- Termination :
- SMD/SMT
- hFE Min :
- 100
- Published :
- 2007
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Frequency :
- 200MHz
- Voltage - Rated DC :
- -60V
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- -1.6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Junction Temperature (Tj) :
- 150°C
- Datasheets
- MMBT2907AT-7-F

PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-523 Tape & Reel (TR) Surface Mount
MMBT2907AT-7-F Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -1.6V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -600mA is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -600mA.In this part, there is a transition frequency of 200MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is -600mA volts.
MMBT2907AT-7-F Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMBT2907AT-7-F Applications
There are a lot of Diodes Incorporated
MMBT2907AT-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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