MMBT2907ALT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

60V

Max Collector Current :

600mA

Published :

2007

Surface Mount :

yes

Terminal Position :

Dual

Voltage - Rated DC :

-60V

hFE Min :

75

Contact Plating :

Tin

Number of Terminations :

3

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Width :

1.4mm

Current Rating :

-600mA

Collector Base Voltage (VCBO) :

60V

Polarity/Channel Type :

PNP

Length :

3.04mm

Number of Elements :

1

Emitter Base Voltage (VEBO) :

5V

Element Configuration :

Single

Lead Free :

Lead Free

Number of Pins :

3

Turn On Time-Max (ton) :

45ns

Gain Bandwidth Product :

200MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Max Breakdown Voltage :

60V

Height :

1.01mm

REACH SVHC :

No SVHC

Factory Lead Time :

10 Weeks

Transistor Type :

PNP

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

60V

Collector Emitter Saturation Voltage :

-1.6V

Base Part Number :

MMBT2907A

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Transition Frequency :

200MHz

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Radiation Hardening :

No

Max Power Dissipation :

300mW

Pin Count :

3

Current - Collector Cutoff (Max) :

10nA ICBO

Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Frequency :

200MHz