MMBT2907ALT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

300mW

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Max Collector Current :

-600mA

Frequency :

200MHz

Operating Temperature :

-55°C~150°C TJ

Max Junction Temperature (Tj) :

150°C

Gain Bandwidth Product :

200MHz

Collector Emitter Breakdown Voltage :

-60V

JESD-609 Code :

e3

Width :

1.3mm

Number of Pins :

3

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

-60V

Published :

2006

Transistor Type :

PNP

Pbfree Code :

yes

Transition Frequency :

200MHz

Transistor Application :

SWITCHING

Height :

1.11mm

Contact Plating :

Tin

Turn On Time-Max (ton) :

45ns

Number of Elements :

1

Emitter Base Voltage (VEBO) :

-5V

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Terminal Form :

Gull wing

hFE Min :

100

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Type :

GENERAL PURPOSE

Base Part Number :

MMBT2907A

Mounting Type :

Surface Mount

Surface Mount :

yes

Power Dissipation :

225mW

Packaging :

Tape and Reel (TR)

Pin Count :

3

Number of Terminations :

3

Max Breakdown Voltage :

60V

ECCN Code :

EAR99

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Current Rating :

-600mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Voltage - Rated DC :

-60V

Current - Collector Cutoff (Max) :

10nA ICBO

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Emitter Voltage (VCEO) :

-60V

Current - Collector (Ic) (Max) :

600mA

Transistor Element Material :

SILICON

Length :

2.9mm

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

-400mV