MMBT2907ALT1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

-400mV

Package / Case :

TO-236-3, SC-59, SOT-23-3

Base Part Number :

MMBT2907A

Radiation Hardening :

No

Height :

1.11mm

Collector Emitter Voltage (VCEO) :

-60V

Pin Count :

3

Frequency :

200MHz

Type :

GENERAL PURPOSE

Published :

2006

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Current Rating :

-600mA

Max Junction Temperature (Tj) :

150°C

Contact Plating :

Tin

Length :

2.9mm

Max Collector Current :

-600mA

Number of Pins :

3

hFE Min :

100

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

-60V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mounting Type :

Surface Mount

Width :

1.3mm

Power Dissipation :

225mW

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Factory Lead Time :

10 Weeks

ECCN Code :

EAR99

Turn On Time-Max (ton) :

45ns

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

60V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Gain Bandwidth Product :

200MHz

Transistor Type :

PNP

Surface Mount :

yes

Transition Frequency :

200MHz

Current - Collector (Ic) (Max) :

600mA

Max Power Dissipation :

300mW

Emitter Base Voltage (VEBO) :

-5V

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-60V

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Collector Emitter Breakdown Voltage :

-60V

Current - Collector Cutoff (Max) :

10nA ICBO

Element Configuration :

Single