MMBT2907ALT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

-60V

Current - Collector (Ic) (Max) :

600mA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Max Breakdown Voltage :

60V

REACH SVHC :

No SVHC

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

-400mV

Voltage - Rated DC :

-60V

Collector Emitter Voltage (VCEO) :

-60V

Turn On Time-Max (ton) :

45ns

Number of Elements :

1

Lead Free :

Lead Free

Transistor Type :

PNP

Transistor Application :

SWITCHING

Terminal Position :

Dual

Pbfree Code :

yes

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

-5V

Max Power Dissipation :

300mW

Length :

2.9mm

Current - Collector Cutoff (Max) :

10nA ICBO

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Base Part Number :

MMBT2907A

Element Configuration :

Single

Type :

GENERAL PURPOSE

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Transistor Element Material :

SILICON

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Junction Temperature (Tj) :

150°C

Frequency :

200MHz

Contact Plating :

Tin

Power Dissipation :

225mW

Current Rating :

-600mA

Width :

1.3mm

Collector Emitter Breakdown Voltage :

-60V

Published :

2006

Factory Lead Time :

10 Weeks

Radiation Hardening :

No

Number of Pins :

3

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Gain Bandwidth Product :

200MHz

Terminal Form :

Gull wing

Transition Frequency :

200MHz

hFE Min :

100

Height :

1.11mm

Max Collector Current :

-600mA