MMBT2907A

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

hFE Min :

100

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

60V

Transistor Type :

PNP

Weight :

1.437803g

Collector Emitter Voltage (VCEO) :

1.6V

Number of Elements :

1

Transition Frequency :

200MHz

Element Configuration :

Single

Published :

2006

Turn Off Time-Max (toff) :

285ns

Mounting Type :

Surface Mount

Power - Max :

250mW

Frequency :

200MHz

Max Power Dissipation :

350mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G3

JESD-609 Code :

e3

Turn On Time-Max (ton) :

35ns

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Current - Collector Cutoff (Max) :

20nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

-5V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

600mA

Mount :

Surface Mount

Transistor Application :

SWITCHING

Max Collector Current :

600mA

Continuous Collector Current :

-600mA

Polarity/Channel Type :

PNP

Peak Reflow Temperature (Cel) :

NOT SPECIFIED