MMBT2907

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Mfr.Part #
MMBT2907
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 40V 0.8A SOT23-3
Stock
21,436
In Stock :
21,436

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
60V
Transition Frequency :
200MHz
Number of Elements :
1
Max Collector Current :
600mA
Factory Lead Time :
10 Weeks
Packaging :
Tape and Reel (TR)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Frequency :
200MHz
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-236-3, SC-59, SOT-23-3
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
JESD-609 Code :
e3
JESD-30 Code :
R-PDSO-G3
Transistor Application :
SWITCHING
Current - Collector Cutoff (Max) :
20nA ICBO
Turn On Time-Max (ton) :
35ns
Terminal Position :
Dual
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Collector Emitter Voltage (VCEO) :
1.6V
Element Configuration :
Single
Published :
2006
Continuous Collector Current :
-600mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
250mW
Mount :
Surface Mount
Weight :
1.437803g
Terminal Finish :
Tin (Sn)
Number of Terminations :
3
Emitter Base Voltage (VEBO) :
-5V
Polarity/Channel Type :
PNP
Terminal Form :
Gull wing
Current - Collector (Ic) (Max) :
600mA
Transistor Type :
PNP
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
hFE Min :
100
Max Power Dissipation :
350mW
RoHS Status :
ROHS3 Compliant
Turn Off Time-Max (toff) :
285ns
Datasheets
MMBT2907
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT2907 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, MMBT2907 pinout, MMBT2907 datasheet PDF, MMBT2907 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT2907 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT2907


PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT2907A-G Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Maintaining the continuous collector voltage at -600mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.200MHz is present in the transition frequency.Maximum collector currents can be below 600mA volts.

MMBT2907A-G Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz


MMBT2907A-G Applications


There are a lot of Comchip Technology
MMBT2907A-G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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