MMBT2907
- Mfr.Part #
- MMBT2907
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.8A SOT23-3
- Stock
- 21,436
- In Stock :
- 21,436
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 200MHz
- Number of Elements :
- 1
- Max Collector Current :
- 600mA
- Factory Lead Time :
- 10 Weeks
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Frequency :
- 200MHz
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PDSO-G3
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Turn On Time-Max (ton) :
- 35ns
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Element Configuration :
- Single
- Published :
- 2006
- Continuous Collector Current :
- -600mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 250mW
- Mount :
- Surface Mount
- Weight :
- 1.437803g
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Current - Collector (Ic) (Max) :
- 600mA
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- hFE Min :
- 100
- Max Power Dissipation :
- 350mW
- RoHS Status :
- ROHS3 Compliant
- Turn Off Time-Max (toff) :
- 285ns
- Datasheets
- MMBT2907

PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2907A-G Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Maintaining the continuous collector voltage at -600mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.200MHz is present in the transition frequency.Maximum collector currents can be below 600mA volts.
MMBT2907A-G Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
MMBT2907A-G Applications
There are a lot of Comchip Technology
MMBT2907A-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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