MMBT2907

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Polarity/Channel Type :

PNP

Max Power Dissipation :

350mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn Off Time-Max (toff) :

285ns

Terminal Position :

Dual

Frequency :

200MHz

Current - Collector (Ic) (Max) :

600mA

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

20nA ICBO

Transistor Application :

SWITCHING

Published :

2006

hFE Min :

100

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Emitter Base Voltage (VEBO) :

-5V

Terminal Form :

Gull wing

Number of Elements :

1

Continuous Collector Current :

-600mA

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

600mA

Power - Max :

250mW

Collector Emitter Voltage (VCEO) :

1.6V

Transistor Type :

PNP

Collector Emitter Breakdown Voltage :

60V

Weight :

1.437803g

Transition Frequency :

200MHz

Turn On Time-Max (ton) :

35ns

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Factory Lead Time :

10 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-30 Code :

R-PDSO-G3

Operating Temperature :

-55°C~150°C TJ