MMBT2484LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current - Collector Cutoff (Max) :

10nA ICBO

Published :

2006

Collector Emitter Voltage (VCEO) :

60V

Power Dissipation :

300mW

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Factory Lead Time :

2 Weeks

Collector Emitter Breakdown Voltage :

60V

Number of Pins :

3

hFE Min :

250

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Power Dissipation :

225mW

Collector Base Voltage (VCBO) :

60V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 1mA 5V

Base Part Number :

MMBT2484

Emitter Base Voltage (VEBO) :

6V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

350mV @ 100µA, 1mA

Qualification Status :

Not Qualified

Power - Max :

225mW

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

NPN

Number of Terminations :

3

Max Collector Current :

100mA

Terminal Position :

Dual

Terminal Form :

Gull wing

Element Configuration :

Single

Polarity/Channel Type :

NPN

Collector Emitter Saturation Voltage :

350mV

ECCN Code :

EAR99

Gain Bandwidth Product :

650MHz

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount