MMBT2484LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

60V

Polarity/Channel Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

ECCN Code :

EAR99

Factory Lead Time :

2 Weeks

Collector Emitter Voltage (VCEO) :

60V

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

10nA ICBO

Max Collector Current :

100mA

Published :

2006

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

6V

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

350mV @ 100µA, 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

hFE Min :

250

Power - Max :

225mW

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

650MHz

Terminal Form :

Gull wing

Transistor Type :

NPN

Base Part Number :

MMBT2484

Collector Emitter Saturation Voltage :

350mV

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 1mA 5V

Power Dissipation :

300mW

Number of Pins :

3

Collector Base Voltage (VCBO) :

60V

Max Power Dissipation :

225mW

Number of Elements :

1