MMBT2484LT1G
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- Mfr.Part #
- MMBT2484LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.1A SOT23-3
- Stock
- 165
- In Stock ：
- 165
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- Height :
- 1.01mm
- Max Frequency :
- 1MHz
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Radiation Hardening :
- No
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- hFE Min :
- 250
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Power Dissipation :
- 300mW
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 350mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 60V
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 60V
- Width :
- 1.4mm
- Max Power Dissipation :
- 225mW
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MMBT2484
- Lead Free :
- Lead Free
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Current Rating :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 1mA 5V
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 4 Weeks
- Voltage - Rated DC :
- 60V
- Mounting Type :
- Surface Mount
- Length :
- 3.04mm
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 100µA, 1mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- MMBT2484LT1G
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2484LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 1mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 350mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 100μA, 1mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 100mA volts.
MMBT2484LT1G Features
the DC current gain for this device is 250 @ 1mA 5V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 100μA, 1mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
MMBT2484LT1G Applications
There are a lot of ON Semiconductor
MMBT2484LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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