MMBT2484

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10μA 5V

Collector Emitter Breakdown Voltage :

60V

Max Power Dissipation :

350mW

JESD-609 Code :

e3

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

350mV @ 100µA, 1mA

Collector Emitter Saturation Voltage :

350mV

Width :

1.3mm

Current Rating :

100mA

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

350mW

Number of Pins :

3

Base Part Number :

MMBT2484

Voltage - Rated DC :

60V

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Weight :

30mg

Number of Terminations :

3

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

10nA ICBO

Element Configuration :

Single

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

5V

Transistor Type :

NPN

Max Collector Current :

100mA

Terminal Position :

Dual

Max Frequency :

140kHz

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

60V

Collector Emitter Voltage (VCEO) :

60V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

930μm

Length :

2.92mm

Lead Free :

Lead Free

Max Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Published :

2000

hFE Min :

100

Transistor Application :

AMPLIFIER