MMBT2369LT3G
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- Mfr.Part #
- MMBT2369LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.2A SOT23-3
- Stock
- 14,626
- In Stock ：
- 14,626
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 15V
- Length :
- 3.04mm
- Emitter Base Voltage (VEBO) :
- 4.5V
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 250mV
- hFE Min :
- 40
- Transistor Type :
- NPN
- Surface Mount :
- yes
- Width :
- 2.64mm
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Published :
- 2008
- Max Frequency :
- 1MHz
- Factory Lead Time :
- 2 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Max Collector Current :
- 200mA
- Max Power Dissipation :
- 225mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 350mV
- Base Part Number :
- MMBT2369
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 40V
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.11mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 400nA
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 15V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Power Dissipation :
- 300mW
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- MMBT2369LT3G
NPN -55°C~150°C TJ 400nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2369LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 10mA 350mV.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 1mA, 10mA.The emitter base voltage can be kept at 4.5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMBT2369LT3G Features
the DC current gain for this device is 40 @ 10mA 350mV
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
MMBT2369LT3G Applications
There are a lot of ON Semiconductor
MMBT2369LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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