MMBT2369LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA 350mV

Number of Pins :

3

Factory Lead Time :

10 Weeks

Polarity/Channel Type :

NPN

Transition Frequency :

500MHz

Collector Base Voltage (VCBO) :

40V

Element Configuration :

Single

Max Power Dissipation :

300mW

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pin Count :

3

Published :

2004

Power Dissipation :

300mW

Weight :

4.535924g

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Voltage - Rated DC :

15V

Width :

1.3mm

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

200mA

Emitter Base Voltage (VEBO) :

4.5V

Surface Mount :

yes

Current Rating :

200mA

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Number of Terminations :

3

Transistor Application :

SWITCHING

Terminal Position :

Dual

Base Part Number :

MMBT2369

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

15V

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

400nA

hFE Min :

40

Max Breakdown Voltage :

15V

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Pbfree Code :

yes

Number of Elements :

1

Collector Emitter Saturation Voltage :

250mV

Length :

2.9mm

Collector Emitter Breakdown Voltage :

15V

RoHS Status :

ROHS3 Compliant

Power - Max :

225mW

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Type :

NPN

Height :

940μm

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

ECCN Code :

EAR99